-
- En
-
-
Crystal orientation, dimension, and thickness can be customized according to your requirements. The roughness of the polished surface is less than 0.5nm (≤5Å). All substrates are packed with clean bag (class 100) in the super-clean room(class 1000).
The following are the single-crystal substrate materials we can supply:
Substrates for Superconductor Films: LSAT, LaAlO3, MgO, NdCaAlO4, NdGaO3, SrTiO3, SrLaAlO4, YSZ, KTN, YAP(YAlO3)
Substrates for Magnetic and Ferro-Electronic Film: BaTiO3, GdScO3, KTaO3, LaAlO3, LSAT, MgO, NdGaO3, SrTiO3, Fe:SrTiO3, Nb:SrTiO3, Nd:SrTiO3, DyScO3, GGG, GSGG, SBN, SGGG, TbScO3, TGG
Substrates for III-V Nitride Films: Al2O3, LiAlO2, LSAT, MgAl2O4, MgAl6O10, SiC (4-H SiC, 6-H SiC), ZnO, GaN, ScMgAlO4
Semiconductor Substrates: GaSb, GaAs, InP, InAs, Germanium, Silicon, SiC (4-H SiC, 6-H SiC), GaN
Optical Crystal Substrates: BaF2, CaF2, MgF2, LiF, YAG, ZnS, ZnSe, Germanium, Al2O3
Piezoelectric Crystal Substrates: LiNbO3, LiTaO3, PMT-PT, LGS
Scintillation Crystal Substrates: BGO, Ce: YAG, Ce: YAP, CdWO4
Birefringent Crystal Substrates: LiNbO3, LiTaO3, TeO2, TiO2, SiO2 (quartz single crystal), YVO4
Halide Crystal Substrates: NaCl, KBr, KCl
Single crystal substrate refers to the substrate materials used for epitaxial growth and the production of semiconductor devices.
Epitaxial growth refers to the technique of growing crystalline layers with consistent crystal axes on a single crystal substrate, the epitaxial layer can be of the same material(Si/Si) or of different materials(SiGe/Si or SiC/Si).
Epitaxial growth methods include molecular beam epitaxy(MBE), chemical vapor deposition(CVD), atmospheric pressure and reduced pressure epitaxy(AP&RP Epi), etc.
