BBO crystal is an important nonlinear optical crystal with combination of unique optical properties. Broad transmission and phase matching ranges, large nonlinear coefficient, high damage threshold and excellent optical homogeneity provide attractive possibilities for various nonlinear optical applications.
Harmonic generation (up to a fifth) of pulsed Nd-doped crystal-based lasers
Frequency doubling, a tripling of pulsed Ti: sapphire, Yb-doped, dye lasers
Characterization of ultrashort laser pulses by FROG, XFROG, SPIDER, dispersion scan, and chirp scan methods
OPA and OPO
Pockels' Cell
Broad phase match range from 409.6 nm to 3500 nm;
Wide transmission region from 190 nm to 3500 nm;
Large effective second-harmonic-generation (SHG) coefficient;
High damage threshold;
High optical homogeneity with δn ≈10-6/cm;
Wide temperature bandwidth of about 55℃.
Tolerance of cutting angle | △θ≤±0.25°,△φ≤±0.25° |
Tolerance of dimension | Dimension+0/-0.1 mm，L：±0.1mm |
Flatness | λ/10 @ 632.8nm |
Wavefront distortion | λ/8@ 632.8nm |
Surface quality | 10/5 per MIL-O-13830A |
Parallelism | 20″ |
Perpendicularity | 5′ |
Clear Aperture: | > 90% |
Chamfer: | < 0.1 mm @ 45° |
Size | Upon customer request |
Coating | AR/PR coating upon customer’s request |
Damage Threshold | 750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
Quality Warranty Period | One year under proper use |
Transparency Range | 190-3500nm |
SHG Phase Matchable Range | 409.6-3500nm (Type I) 525-3500nm (Type II) |
Therm-optic Coefficient (/℃, λ in μm) | dno/dT=-16.6x 10^-6/℃ |
Absorption Coefficients | <0.1%/cm(at 1064nm) <1%/cm(at 532nm) |
Angle Acceptance | 0.8mrad·cm (θ, Type I, 1064 SHG) |
Temperature Acceptance | 55℃·cm |
Spectral Acceptance | 1.1nm·cm |
Walk-off Angle | 2.7° (Type I 1064 SHG) |
NLO Coefficients | deff(I)=d31sinθ+(d11cos3Φ- d22 sin3Φ) cosθq |
Non-vanished NLO susceptibilities | d11 = 5.8 x d36(KDP) |
Sellmeier Equations (λ in μm) | no²=2.7359+0.01878/(λ²-0.01822)-0.01354λ² |
Electro-optic coefficients | γ22 = 2.7 pm/V |
Half-wave voltage | 7 KV (at 1064 nm,3x3x20mm3) |
Resistivity | >10^11 ohm·cm |
Relative Dielectric Constant | εs11/εo:6.7 εs33/εo:8.1 Tan δ<0.001 |
Crystal Structure | Trigonal，Space Group R3c |
Lattice Parameter | a=b=12.532Å,c=12.717Å,Z=6 |
Melting Point | About 1095℃ |
Mohs Hardness | 4 |
Density | 3.85 g/cm3 |
Refractive indices | no = 1,6551; ne = 1,5426 |
Thermal Conductivity | ⊥c: 1.2W/m/K; //c: 1.6W/m/K |
Thermal Expansion Coefficients | α11=4 x 10^-6/K; α33=36 x 10^-6/K |
