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gagg ce crystal array
gagg ce crystal array
gagg crystal array
gagg ce array

GAGG(Ce) Array

GAGG(Ce) gadolinium gallium aluminum garnet is a new detection material for high-end CT and security equipment. It has the advantages of high density, high light output, short decay time, and low radioactive background. Besides, it has stable chemical composition, no cleavability and no hygroscopy, and is easy to process and assemble, which can be applied in the fields of radiation detection and high energy physics.

 

OST Photonics is able to supply GAGG(Ce) linear arrays and GAGG(Ce) 2-D arrays according to our customers' different design options in terms of pixel size, the number of pixels, reflector materials and crystal surface finishes. We offer a variety of design options and reflector materials to optimize the array performance. Our manufacturing process can ensure high light output as well as excellent pixel to pixel uniformity with minimal crosstalk. Furthermore, offset GAGG(Ce) arrays (multilayer GAGG(Ce) arrays) and different types of GAGG(Ce) crystal materials (balanced type, fast decay time type, low afterglow type and high light output type) are also available upon requests.

Applications of GAGG(Ce) Array


  • Gamma-ray detection

  • X-ray medical imaging

  • High energy physics

  • Positron Emission Tomography-Computed Tomography(PET-CT)

  • Single photon emission computed tomography(SPECT)


Advantages of GAGG(Ce) Array


  • High light output

  • High energy resolution

  • Fast decay time

  • No background

  • No hygroscopy


Specifications of GAGG(Ce) Array


  • Linear array: 1x8; 1x16; 1x32; 1x64 etc. (customized upon request)

  • 2-D array: 8x8; 16x16; 64x64 etc. (customized upon request)

  • Minimal pixel size: 0.2 mm x 0.2 mm 


Reflector Types and Thicknesses of GAGG(Ce) Array


Material

Thickness of reflector material + adhesive

BaSO4

≥0.1 mm

ESR

0.08 mm

E60

0.075 mm

TiO2

≥0.1 mm


Different Types of GAGG(Ce) Crystal


Type

Light yield

Decay time

Afterglow

High light output type

54000 photons/keV

<150 ns

≤0.10%@20ms

Low afterglow type

45000 photons/keV

<70 ns

≤0.02%@20ms

Fast decay time type

30000 photons/keV

<50 ns

≤0.10%@20ms

Balanced type

42000 photons/keV

<90 ns

≤0.10%@20ms


Properties of GAGG(Ce) Crystal



Product Type

High light output type

Low afterglow type

Fast decay time type

Balanced type

Scintillation decay time (ns)

<150

<70

<50

<90

Emission peak wavelength (nm)

520

520

520

520

Refractive index (peak wavelength)

1.9

1.9

1.9

1.9

Density (g/cm3)

6.6

6.6

6.6

6.6

Light yield (photoelectron /keV)

54

45

30

42

Energy resolution ( 137Cs) (%)

6

6

7%

6%

Radiation hardness (rad)

10^5

10^5

10^5

10^5

Crystal structure

Cube

Cube

Cube

Cube

Cleavage plane

No

No

No

No

Hygroscopic

No

No

No

No

Mohs hardness

8

8

8

8

Afterglow

≤0.10%@20ms

≤0.02%@20ms

≤0.10%@20ms

≤0.10%@20ms


Quality Control for GAGG(Ce) Array


  • Dimension testing

  • Relative light output testing

  • Pixel light output uniformity: ≤10%; ≤20%; ≤30% or on request

  • Energy resolution testing

  • Scatter map


Contact Us
Welcome your presence, you can send us an email, we will get in touch with you within 24 hours.
Head Office: No. 66, 8 Group, Chengbei Village, Yanguan Town, Jiaxing 314411, China;

Hangzhou Branch: Room 1012, Chunhua Bussiness Center, No. 159, Hangbo Street, Shangcheng District, Hangzhou 310009, Zhejiang, China
Head Office: No. 66, 8 Group, Chengbei Village, Yanguan Town, Jiaxing 314411, China;

Hangzhou Branch: Room 1012, Chunhua Bussiness Center, No. 159, Hangbo Street, Shangcheng District, Hangzhou 310009, Zhejiang, China
sales@ostphotonics.com; info@ostphotonics.com +86-0571-86780460