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Jiaxing AOSITE Photonics Technology Co.,Ltd.
gan crystal
gan crystal
gallium nitride

GaN Substrates

Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.


OST Photonics offers high quality GaN substrates for researchers and industries. There are two types of GaN materials for you to choose from: N-type GaN and semi-insulating GaN. Crystal size and thickness can be customized according to your requirements.


Application of GaN Substrates


  • High temperature semiconductor device

  • High frequency and high power electronic devices

  • MOS-based devices

  • Ultra-High-Brightness Light Emitting Diode


Advantages of GaN Substrates


  • Large direct band gap

  • Strong atomic bonds

  • High thermal conductivity

  • Strong anti-irradiation ability


Ability of GaN Substrates


  • Orientation: C-plane (0001), etc.

  • Dimension: 2”, 4”, 10x10.5mm, 14x15mm, 10x15mm, etc.

  • Thickness: 0.3mm, 0.35mm, 0.4mm, etc.

  • Available items: wafers, substrates, blanks and customized optics


Specification and Properties of GaN Substrates


Crystal Structure

Hexagonal wurtzite

Lattice Constant

a=3.186Å, c=5.186Å

Conduct Type

N-type

Semi-insulating

Resistivity

<0.5 ohm.cm

>1x10^6 ohm.cm

Marco Defect Density

0 cm-2 or <=2 cm-2

Orientation

C-plane (0001), etc.

Orientation Tolerance

±0.5° or better

Dimension

2”, 4”, 10x10.5mm, 14x15mm, 10x15mm, etc.

Dimension Tolerance

±0.1 mm or better

Thickness

0.3mm, 0.35mm, 0.4mm, etc.

Thickness Tolerance

±0.05 mm or better

TTV

≤15 µm

BOW

≤20 µm

Dislocation Density

<5x10^6 cm-2

Useable Surface Area

>90%

Surface Finish

Front Surface: Ra < 0.2nm (Epi-ready polished)

Back Surface: Fine ground

Package

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.


Contact Us
Welcome your presence, you can send us an email, we will get in touch with you within 24 hours.
Head Office: No. 66, 8 Group, Chengbei Village, Yanguan Town, Jiaxing 314411, China;

Hangzhou Branch: Room 1012, Chunhua Bussiness Center, No. 159, Hangbo Street, Shangcheng District, Hangzhou 310009, Zhejiang, China
Head Office: No. 66, 8 Group, Chengbei Village, Yanguan Town, Jiaxing 314411, China;

Hangzhou Branch: Room 1012, Chunhua Bussiness Center, No. 159, Hangbo Street, Shangcheng District, Hangzhou 310009, Zhejiang, China
sales@ostphotonics.com; info@ostphotonics.com +86-0571-86780460