InAs is an important narrow band gap semiconductor, with high electron mobility, small effective mass and strong spin orbit coupling characteristics, it is the ideal material for the production of high-speed and low power electronic devices, infrared optoelectronic devices and spintronic devices. Especially in recent years, the application of one-dimensional InAs nanowires in the study of topological quantum computing has attracted people's attention.
OST Photonics offer 2”, 3” InAs wafers for semiconductor industry. There are four types of InAs materials for you to choose from: N-type InAs (undoped), N-type InAs (Sn doped), N-type InAs (S doped) and P-type InAs (Zn doped). The thickness can be customized according to your requirements. In addition, customized InAs substrates are also available upon requests.