Name: SiC Wafers
Brand: Jiaxing AOSITE Photonics Technology Co.,Ltd.

OST Photonics offer 4” and 6” SiC wafers for semiconductor industry. There are two conduct types of SiC materials for you to choose from: N-type SiC (Nitrogen doped) and high purity semi-insulating SiC (undoped). High purity semi-insulating SiC wafers is mainly used in 5G communication applications. It has the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed and large-capacity information transmission, and is regarded as the most ideal material for making microwave power devices. N-type SiC wafer is mainly used in new energy vehicles, high voltage transmission and transformation stations, white goods, high-speed trains, motors, photovoltaic inverter, pulse power supply and other fields, it has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment volume, improving equipment performance and so on, it has irreplaceable advantages in the production of power electronic devices. In addition, SiC ingots and customized SiC substrates are also available upon requests.

No.	Items	Unit	Production	Research	Dummy
1 Crystal Parameters
1.1	Polytype		4H	4H	4H
1.2	Surface orientation onFaxis		<0001>	<0001>	<0001>
1.3	Surface orientation off-axis		0±0.2°	0±0.2°	0±02
1.4	(0004)(FWHM)	arcsec	≤45arcsec	≤60arcsec	≤100arcsec
2 Electrical Parameters
2.1	Type		HPSI	HPSI	HPSI
2.2	Resistivity	ohm-cm	≥1E9ohm-cm	100%area>1E5ohm-cm	70%area>1E5ohm-cm
3 Mechanical Parameters
3.1	Diameter	mm	99.5~100mm	99.5~100mm	995~100mm
3.2	Thickness	μm	500±25μm	500±25μm	500±25um
3.3	Primary flat orientation		[1-100]±5°	[1-100]±5°	[1-100]±5°
3.4	Primary flat length	mm	32.5±1.5mm	32.5±1.5mm	32.5±1.5mm
3.5	Secondary flat position		90±5° 90°CW from primary flat ±5°,silicon face up	90±5° 90°CW from primary flat ±5°,silicon face up	90±5 90°CW from primary flat ±5°,silicon face up
3.6	Secondary flat length	mm	18±1.5mm	18±1.5mm	18±1.5mm
3.7	TTV	μm	≤5μm	≤10μm	≤20μm
3.8	LTV	μm	≤2μm(5mm*5mm)	≤5μm(5mm*5mm)	NA
3.9	Bow	μm	-15μm~15μm	-35μm~35μm	-45μm~45μm
3.10	Warp	μm	≤20μm	≤45μm	≤50μm
3.11	(AFM)Front (Si-face)Roughr	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
4 Structure
4.1	Micropipe Density	ea/cm2	≤lea/cm2	≤5ea/cm2	≤10ea/cm²
4.2	Carbon Density	ea/cm2	≤lea/cm²	NA	NA
4.3	Hexagonal void		None	NA	NA
4.4	Metal impurities	atoms/cm2	≤5E12atoms/cm2	≤5E12atoms/cm2	NA

5 Front Quality
5.1	Front		Si	Si	Si
5.2	Surface Finish		Si CMP Si-face CMP	Si CMP Si-face CMP	Si CMP Si-face CMP
5.3	Partides	ea/wafer	≤60(size≥0.3μm)	NA	NA
5.4	Scratches	ea/mm	≤2，≤Diameter (Cumulative Length)	≤2*Diameter (Cumulative Length)	NA
5.5	Orange peel/pits/stains/striations/cracks/contamination	mm	None	None	NA
5.6	chips/indents/fracture/hex plates		None	None	None
5.7	Polytype areas		None	≤20%(Cumulative area)	≤30%(Cumulative area)
5.8	Front laser marking		None	None	None
6 Back Quality
6.1	Back Finish		C CMP C-face CMP	C CMP C-face CMP	C面CMP C-face CMP
6.2	Scratches	ea/mm	≤5，≤2*Diameter (Cumulative Length)	NA	NA
6.3	Back defects (edge chips/indents)		None	None	None
6.4	Back roughness	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
6.5	Back laser marking		1mm (from top edge)	1mm(from top edge)	1mm (from top edge)
7 Edge
7.1	Edge		Chamfer	Chamfer	Chamfer
8 Packaging
8.1	Packaging		The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.
8.2	Packaging		Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.	Multi-wafer assette,epi-ready.

No.	Items	Unit	Production	Research	Dummy
1 Boule Parameters
1.1	Polytype		4H	4H	4H
1.2	Surface orientation on-axis		<0001>	<0001>	<0001>
1.3	Surface orientation off-axis	o	0±0.25°	0±0.2°	0±0.2°
1.4	( 0 0 0 4 ) ( F W H M )	arcsec	≤45arcsec	≤60arcsec	≤100arcsec
2 Electrical Parameters
2.1	Type		HPS I O R	HPSI	HPSI
2.2	Resistivity	ohm ·cm	≥1E8ohm ·cm	100%area>1E5ohm ·cm	70%area>1E5ohm-cm
3 Mechanical Parameters
3.1	Diameter	mm	150±0.2mm	150±0.2mm	99.5~100mm
3.2	Thickness	μm	500±25um	500±25μm	500±25um
3.3	Notch Notch orientation	o	[1-100]±5°	[1-100]±5°	[1-100]±5°
3.4	Notch Notch Depth	mm	1~1.25mm	1~1.25mm	1~1.25mm
3.6	L TV	μm	≤3μm(5mm*5mm)	≤5μm(5mm*5mm)	≤10μm(5mm*5mm)
3.5	T TV	μm	≤5μm	≤10μm	≤15μm
3.7	Bow	μm	-25μm~25μm	-35μm~35μm	-45μm~45μm
3.8	Warp	μm	≤35μm	≤45μm	≤55μm
3.9	Front Roughness	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
4 Structure
4.1	Micropipe density	ea/cm	≤1 ea/cm²	≤10ea/cm²	≤15ea/cm²
4.2	Carbon inclusions density	ea/cm²	≤1 ea/cm²	NA	NA
4.3	Hexagonal void		None	NA	NA
4.4	Metal impurities	atoms/cm²	≤5E12atoms/cm	≤5E12atoms/cm2	NA
5 Front Quality
5.1	Front		Si	Si	Si
5.2	Surface Finish		Si CMP Si-face CMP	Si CMP Si-face CMP	Si CMP Si-face CMP
5.3	Particles	ea/wafer	≤60(尺寸size≥0.3μm)	NA	NA
5.4	Scraches	ea/mm	≤5，≤Diameter (Cumulative Length)	≤2*Diameter (Cumulative Length)	NA
5.5	Orange peel/pits/stains/striations/cracks/contamination		None	None	NA
5.6	Edge chips/indents/fracture		None	None	None
5.7	Polytype areas		None	≤20%(Cumulative area)	≤30%(Cumulative area)
5.8	Front laser marking		None	None	None
6 Back Quality
6.1	Back finish		C CMP C-face CMP	C CMP C-face CMP	C CMP C-face CMP
6.2	Scrachs	ea/mm	≤5，≤2*Diameter (Cumulative Length)	NA	NA
6.3	Back defects (edge chips/indents)	--	None	None	None
6.4	Back roughness	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
6.5	Back laser marking	--	SEMI	SEMI	SEMI
7 Edge
7.1	Edge		Chamfer	倒角处理Chamfer	倒角处理Chamfer
8 Packaging
8.1	Packaging		The inner bag is filled with nitrogen and the outer bag is vacuumed	The inner bag is filled with nitrogen and the outer bag is vacuumed	The inner bag is filled with nitrogen and the outer bag is vacuumed.
8.2	Packaging		Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.
Notes:"NA"means no request.Items not metioned may refer to SEMI-STD.

No.	Items	Unit	Production	Research	Dummy
1 Boule Parameters
1.1	Polytype		4H	4H	4H
1.2	Surface orientation error		<11-20>4±0.15	<11-20>4±0.15	<11-20>4±0.15
2 Electrical Parameters
2.1	Dopant		n-type Nitrogen	n-type Nitrogen	n-type Nitrogen
2.2	Resistivity	ohm ·cm	0.015~0.025	0.015~0.025	0.015~0.025
3 Mechanical Parameters
3.1	Diameter	mm	99.5~100mm	99.5~100mm	99.5~100mm
3.2	Thickness	μm	350±25	350±25	350±25
3.3	Primary flat orientation	o	[1-100]±5	[1-100]±5	[1-100]±5
3.4	Primary flat length	mm	32.5±1.5	32.5±1.5	32.5±1.5
3.5	Secondary flat		90±5°	90±5°	90±5°
3.6	Secondary flat length	mm	18±1.5mm	18±1.5mm	18±1.5mm
3.8	LTV	μm	≤2(5mm*5mm)	≤5(5mm*5mm)	NA
3.7	TTV	μm	≤5	≤10	≤20
3.9	Bow	μm	-15~15	-35~35	-45~45
3.10	Warp	μm	≤20	≤45	≤50
3.11	(AFM)Front (Si-face) Roughness	nm	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)
4 Structure
4.1	Micropipe density	ea/cm²	≤1	≤5	≤10
4.2	Metal impurities	atoms/cm	≤5E10	≤5E10	NA
4.3	BPD	ea/cm²	≤2000	≤3000	NA
4.4	TSD	ea/cm	≤500	≤1000	NA
5 Front Quality
5.1	Front		Si	Si	Si
5.2	Surface Finish		Si面CMP Si-face CMP	Si面CMP Si-face CMP	Si面CMP Si-face CMP
5.3	Particles	ea/wafer	≤60(尺寸size≥0.3μm)	NA	NA
5.4	Scratchs	ea/wafer	≤2,Total Length≤Diameter	累计长度≤2*Diameter	NA
5.5	Orange peel/pits/cracks/contamination/stains/striations		None	None	NA
5.6	Edge chips/indents/fracture		None	None	NA
5.7	Polytype areas		None	≤20%	≤30%
5.7	Front laser marking		None	None	None
6 Back Quality
6.1	Back finish		C-face polished	C-face polished	C-face polished
6.2	Scraches	ea/mm	≤5,Total Length≤2*Diameter	NA	NA
6.3	Back defects (edge chips/indents)		None	None	None
6.4	Back roughness	nm	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)
6.5	Back laser marking		1mm (from top edge)	1mm (from top edge)	1mm (from top edge)
7 Edge
7.1	Edge		Chamfer	Chamfer	Chamfer
8 Packaging
8.1	Packaging		The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.
8.2	Packaging		Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.
Notes:"NA"means no request.Items not metioned may refer to SEMI-STD.

No.	Items	Unit	Production	Research	Dummy
1 Boule Parameters
1.1	Polytype		4H	4H	4H
1.2	Surface orientation error		<11-20>4±0.15	<11-20>4±0.15	<11-20>4±0.15
2 Electrical Parameters
2.1	Dopant		n-type Nitrogen	n-type Nitrogen	n-type Nitrogen
2.2	Resistivity	ohm-cm	0.015~0.025	0.015~0.025	0.015~0.025
3 Mechanical Parameters
3.1	Diameter	mm	150.0±0.2	150.0±0.2	150.0±0.2
3.2	Thickness	μm	350±25	350±25	350±25
3.3	Primary flat orientation		[1-100]±5	[1-100]±5	[1-100]±5
3.4	Primary flat length	mm	47.5±1.5	47.5±1.5	47.5±1.5
3.5	Secondary flat	mm	None	None	None
3.6	LTV	μm	≤3(5mm*5mm)	≤5(5mm*5mm)	≤10(5mm*5mm)
3.7	TTV	μm	≤5	≤10	≤15
3.8	Bow	μm	-25~25	-35~35	-45~45
3.9	Warp	μm	≤35	≤45	≤55
3.10	(AFM)Front (Si-face)Roughness	nm	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)
4 Structure
4.1	Micropipe density	ea/cm²	<1	<10	<15
4.2	Metal impurities	atoms/cm	≤5E10	≤5E10	NA
4.3	BPD	ea/cm	≤2000	≤3000	NA
4.4	TSD	ea/cm²	≤500	≤1000	NA
5 Front Quality
5.1	Front		Si	Si	Si
5.2	Surface Finish		CMP Si-face CMP	CMP Si-face CMP	CMP Si-face CMP
5.3	Particles	ea/wafer	≤60(尺寸size≥0.3μm)	NA	NA
5.4	Scratchs	ea/wafer	≤5,Total Length≤Diameter	Total Length≤2*Diameter	NA
5.5	Orange peel/pits/cracks/contamination/stains/striations		None	None	NA
5.6	Edge chips/indents/fracture		None	None	None
5.7	Polytype areas		None	≤20%	≤30%
5.8	Front laser marking		None	None	None
6 Back Quality
6.1	Back finish		C-face polished	C-face polished	C-face polished
6.2	Scraches	ea/mm	≤5,Total Length≤2*Diameter	NA	NA
6.3	Back defects (edge chips/indents)		None	None	None
6.4	Back roughness	nm	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)	Ra≤0.2(5μm*5μm)
6.5	Back laser marking		1mm (from top edge)	1mm (from top edge)	1mm (from top edge)
7 Edge
7.1	Edge		Chamfer	Chamfer	Chamfer
8 Packaging
8.1	Packaging		The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.	The inner bag is filled with nitrogen and the outer bag is vacuumed.
8.2	Packaging		Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.	Multi-wafer cassette,epi-ready.
Notes:"NA"means no request.Items not metioned may refer to SEMI-STD.

OST Photonics SiC Wafers

Application of SiC Wafers

Advantages of SiC Wafers

Ability of SiC Wafers

Product Parameters of 4 Inch High Purity Semi-insulating SiC Wafers

Product parameters of 6 inch high purity semi-insulating SiC wafers

Product parameters of 4 inch N-type SiC wafers

Product parameters of 6 inch N-type SiC wafers:

Product parameters of 4 inch N-type SiC ingots:

Product parameters of 6 inch N-type SiC ingots: