InP is an important III-V compound and semiconductor material with advantages of high electron mobility, good radiation stability, and large band gap. Indium Phosphide has particular advantage in two applications: photonics (emission and detection capacities with more than 1,000nm wave length and RF (high-speed and low noise performance in high frequency RF applications). InP is the first choice for performance-driven niche markets in communication, radar, test equipment, and radiation measurement.
OST Photonics offer 2”, 3”, 4” InP wafers for telecommunications and microelectronics applications. There are four types of InP materials for you to choose from: undoped InP, S-doped InP, Zn-doped InP and Fe-doped InP. The thickness can be customized according to your requirements. In addition, customized InP substrates are also available upon requests.
