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DyScO3 Substrates
DyScO3 crystals have a good lattice match with perovskite superconductors and are excellent ferroelectric thin film substrate materials.OST Photonics offers high quality DyScO3 substrates for research...
LSO(Ce) Scintillators
Cerium doped Silicate Lutetium or LSO(Ce) is a new kind of fast inorganic scintillation material, which is good for medical imaging applications.
Ti: Sapphire Laser Crystals
Ti:Sapphire crystal is the most widely used tunable solid-state laser material combining the supreme physical and optical properties with the extremely broad lasing range. Its lasing bandwidth can sup...
BIBO Laser Crystals
BIBO( BiB3O6) Crystal is a newly developed Nonlinear Optical Crystal. It features a large effective nonlinear coefficient, a high damage threshold, and inertness to moisture. Its nonlinear coefficient...
ZnSe Polycrystals Window
Zinc Selenide (ZnSe) are excellent for various IR applications due to their impressively broad transmission wavelength range from 600 nm to 16000 nm and low absorption for IR light. ZnSe also exhibits...
Fe SrTiO3 Substrates
Iron-doped strontium titanate and strontium titanate single crystal have a similar structure, it is a good substrate material for high temperature superconducting films and various oxide films. Fe:SrT...
LuAG(Ce) Scintillators
Lutetium aluminum garnet (or Ce:LuAG) activated by cerium is a well established scintillating material with the primary advantages of high density (6.73g/cm3) and fast decay (80ns), which is suitable for thin imaging screens.
Er: Glass Laser Crystals
Er3+, Yb3+ co-doped phosphate glass is a well-known and commonly used active medium for lasers emitting in the “eye-safe” spectral range of 1,5-1,6 µm.As an eye-safe wavelength laser, 1540um ,Er3+/...
GaAs Substrates
Gallium arsenide (GaAs) is a compound synthesized by two elements of gallium and arsenic. It is an important group IIIA and group VA compound semiconductor material. And it can be used to make microwa...
LuAG(Pr) Scintillators
Praseodymium doped Lutetium Aluminum Garnet (or Pr:LuAG) has high density, high light output, fast decay time and good energy resolution.
GaN Substrates
Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high t...
