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GaAs Wafers
GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency. The RF devices...
KTN Substrates
Potassium niobate-tantalate (KTa1-xNbxO3 or KTN) is a kind of multifunctional crystal with excellent performance, it has obvious electro-optical effect and photorefractive effect. KTN crystal is gener...
LaAlO3 Substrate
Lanthanum aluminate (LaAlO3) single crystal is currently the most important industrialized, large-size single crystal material for high-temperature superconducting thin film substrates. It is grown by...
GaN Wafers
Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high t...
LGS Substrate
Gallium silicate lanthanum crystal (LGS) is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystal are obviously higher than t...
GaSb Wafers
GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band ga...
Germanium Wafers
Germanium single crystal wafers are an important semiconductor substrate material. These high-quality substrates are primarily used in CPV, outer-space solar-cell panel and high-bright light-emitting ...
LiAlO2 Substrates
LiAlO2 (Lithium Aluminate) crystal is the most important substrate for the high-temperature superconducting thin film. It matches very well with high temperatures superconducting materials such as YBa...
InAs Wafers
InAs is an important narrow band gap semiconductor, with high electron mobility, small effective mass and strong spin orbit coupling characteristics, it is the ideal material for the production of hig...
LiF Substrates
Lithium fluoride (LiF) crystal belongs to cubic crystal system, the cleavage plane is (100), it has excellent optical properties, especially in deep ultraviolet band. With the development of deep ultr...
InP Wafers
InP is an important III-V compound and semiconductor material with advantages of high electron mobility, good radiation stability, and large band gap. Indium Phosphide has particular advantage in two ...
LiNbO3 Substrates
Lithium niobate (LiNbO3) is a compound of niobium, lithium and oxygen, and it is a negative crystal (n0>ne). The deformed lithium niobate crystal is a material with multiple properties such as piez...
SiC Wafers
OST Photonics offer 4” and 6” SiC wafers for semiconductor industry. There are two conduct types of SiC materials for you to choose from: N-type SiC (Nitrogen doped) and high purity semi-insulating ...
LiTaO3 Crystal Substrates
The chemical formula of lithium tantalate is LiTaO3, it is colorless or yellowish crystal. LiTaO3 is a ferroelectric crystal with excellent electro-optical, piezoelectric, electrical and pyroelectric ...
Silicon Wafers
OST Photonics offers a wide selection of silicon wafers for semiconductor industry. The wafer diameters are ranging from 2 inch (50.8mm) to 12 inch (300mm), and there are three crystal orientations to...
